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BUH315D
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)) NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE.
3 2 1
APPLICATIONS s HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BUH315D is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors.
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 C St orage Temperature Max. Operating Junction Temperature
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Value 1500 700 10 6 12 3 5 44 -65 to 150 150
Uni t V V V A A A A W
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C C 1/7
December 1999
BUH315D
THERMAL DATA
R t hj-ca se Thermal Resistance Junction-case Max 2.8
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C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CES I EBO V CE(sat ) V BE(s at) h F E Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Saturation Voltage Base-Emitt er Saturation Voltage DC Current Gain RESISTIVE LO AD Storage Time Fall Time INDUCTIVE LO AD Storage Time Fall Time Test Cond ition s V CE = 1500 V V EB = 5 V IC = 3 A IC = 3 A IC = 3 A IC = 3 A IB = 1 A IB = 1 A V CE = 5 V V CE = 5 V 4 2.5 1.8 200 2.7 350 Min. Typ . Max. 200 300 1.5 1.5 9 Un it A mA V V
T j = 100 C
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ts tf ts tf
V CC = 400 V I B1 = 1 A IC = 3 A I B1 = 1 A
IC = 3 A I B2 = -1.5 A
2.7 300
s ns s ns
f = 15625 Hz IB2 = 1.5 A V c eflybac k = 1050 sin 106 t 5
V
VF
Diode F orward Voltage I F = 3 A
2.5
V
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
Safe Operating Area
Thermal Impedance
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BUH315D
Derating Curve DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Power Losses at 16 KHz
Switching Time Inductive Load at 16KHz (see figure 2)
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BUH315D
Switching Time Resistive Load at 16 KHz
BASE DRIVE INFORMATION In order to saturate the power switch and reduce conduction losses, adequate direct base current IB1 has to be provided for the lowest gain hFE at 100 oC (line scan phase). On the other hand, negative base current IB2 must be provided to turn off the power transistor (retrace phase). Most of the dissipation, in the deflection application, occurs at switch-off. Therefore it is essential to determine the value of IB2 which minimizes power losses, fall time tf and, consequently, Tj. A new set of curves have been defined to give total power losses, ts and tf as a function of IB2 at 16 KHz scanning frequencies the optimum negative drive. The test circuit is illustrated in fig. 1. Inductance L 1 serves to control the slope of the negative base current IB2 to recombine the excess carrier in the collector when base current is still present, this would avoid any tailing phenomenon in the collector current. The values of L and C are calculated from the following equations: 1 1 L (IC)2 = C (VCEfly)2 2 2 1 = 2 f = L C Where IC= operating collector current, VCEfly= flyback voltage, f= frequency of oscillation during retrace.
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BUH315D
Figure 1: Inductive Load Switching Test Circuits.
Figure 2: Switching Waveforms in a Deflection Circuit
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BUH315D
ISOWATT218 MECHANICAL DATA
DIM. A C D D1 E F F2 F3 G H L L1 L2 L3 L4 L5 L6 N R DIA mm TYP. inch TYP.
MIN. 5.35 3.30 2.90 1.88 0.75 1.05 1.50 1.90 10.80 15.80 20.80 19.10 22.80 40.50 4.85 20.25 2.1
MAX. 5.65 3.80 3.10 2.08 0.95 1.25 1.70 2.10 11.20 16.20 21.20 19.90 23.60 42.50 5.25 20.75 2.3
MIN. 0.211 0.130 0.114 0.074 0.030 0.041 0.059 0.075 0.425 0.622 0.819 0.752 0.898 1.594 0.191 0.797 0.083
MAX. 0.222 0.150 0.122 0.082 0.037 0.049 0.067 0.083 0.441 0.638 0.835 0.783 0.929 1.673 0.207 0.817 0.091
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0.354
4.6 3.5 3.7 0.138
0.181 0.146
- Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended 0.8 Nm; Maximum: 1 Nm : - The side of the dissipator must be flat within 80 m
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P025C/A
BUH315D
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com .
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